NamLab gGmbH offers an internship aimed at NTUST students in Master‘ programs in Engineering & Technology (Electrical Engineering).
Link to company: https://www.namlab.com/
Electrical Characterization of Emerging Transistors
Host Company: NamLab gGmbH
Duration:
2-3 months, earliest July 2025
Suitable for:
students in Master’ programs in Electrical Engineering
Internship location:
Dresden, Germany
Introduction NamLab and the research group:
NaMLab gGmbH (NLB) is a research institution and a wholly owned subsidiary and affiliated institute of TU Dresden. NaMLab was founded in 2006 as a university-industry joint venture and is now a TU Dresden company. Based on key expertise in dielectric materials for semiconductor devices, NaMLab focuses on the integration and application of its materials expertise applied to reconfigurable and energy efficiency devices by placing the device rather than the material system itself into the center of its research activities. NaMLab conducts industrially oriented research with the overriding aim of developing new material systems for semiconductor technology. It operates an own 330 m² clean room and extensive characterization facilities. In addition to industrial and basic research, services in the field of materials science for nanoelectronic applications complement the portfolio of NaMLab gGmbH.
The Emerging Devices research group at NaMLab is developing novel doping-free transistor technologies as add-on functionalities for classical CMOS. The research ranges from material science and basic physics, electrical characterization towards modelling and circuit design. The targeted applications for the new devices are aimed in neural network computing, hardware security, analog signal processing and quantum electronics.
Tasks and Responsibilities:
Reconfigurable Field Effect Transistors are an emerging class of electronic devices that can be co-integrated into classical CMOS. The electrical characterization of transfer and output characteristics is vital to analyze and model their device behavior. As part of this internship thesis, a measurement setup should be used based on a scripting-based language (XML) that gathers RFET device data for many test structures with different geometrical parameters (e.g., width, gate lengths, and number of contacts). Core-performance indicators like Ion/Ioff ratio or threshold voltage should be extracted and evaluated.
Applicant profile:
Self-organized and conscientious way of working:
– High interest in nanoelectronics and circuit designs and self-starter mindset
– Basic understanding of semiconductor devices
– Fluent in English
– Ability to work in an international team environment
Link to company: https://www.namlab.com/
English